2011. 1. 14 1/7 semiconductor technical data KU047N08P n-ch trench mos fet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h v dss = 75v, i d = 130a h drain-source on resistance : r ds(on) =4.7m ? (max.) @v gs = 10v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 75 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 130 a @t c =100 ? 83 pulsed (note1) i dp 400* single pulsed avalanche energy (note 2) e as 700 mj repetitive avalanche energy (note 1) e ar 9 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 167 w derate above 25 ? 1.33 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.75 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w g d s pin connection dim millimeters to-220ab 1.46 a bc d e f gh j k m no 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate2. drain 3. source 12 3 downloaded from: http:///
2011. 1. 14 2/7 KU047N08P revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 75 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.07 - v/ ? drain cut-off current i dss v ds =75v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =65a - 3.9 4.7 m ? dynamic total gate charge q g v ds =60v, i d =80a v gs =10v (note4,5) - 200 - nc gate-source charge q gs - 40 - gate-drain charge q gd - 65 - turn-on delay time t d(on) v dd =37v i d =80a r g =25 ? (note4,5) - 140 - ns turn-on rise time t r - 200 - turn-off delay time t d(off) - 520 - turn-off fall time t f - 200 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 8800 - pf output capacitance c oss - 815 - reverse transfer capacitance c rss - 390 - source-drain diode ratings continuous source current i s v gs |